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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ11017/D
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. * High dc Current Gain @ 10 Adc -- hFE = 400 Min (All Types) * Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) - MJ11018, 17 VCEO(sus) = 250 Vdc (Min) - MJ11022, 21 * Low Collector-Emitter Saturation VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A * Monolithic Construction * 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms. MAXIMUM RATINGS
MJ11017 MJ11021* NPN MJ11018* MJ11022
*Motorola Preferred Device
PNP
Rating
Symbol VCEO VCB VEB IC IB
MJ11018 MJ11017 150 150
MJ11022 MJ11021 250 250
Unit Vdc Vdc Vdc Adc Adc
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 - 120 VOLTS 200 WATTS
PD, POWER DISSIPATION (WATTS)
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Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current 50 15 30 0.5 Total Device Dissipation @ TC = 25_C Derate Above 25_C Operating and Storage Junction Temperature Range PD 175 1.16 Watts W/_C TJ, Tstg - 65 to + 175 - 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
CASE 1-07 TO-204AA (TO-3)
Symbol RJC
Max
Unit
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle
v 10%.
0.86
_C/W
200
150
100
50
0
0
25
50
75 100 125 150 TC, CASE TEMPERATURE (C)
175
200
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
1
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MJ11017 MJ11021 MJ11018 MJ11022
(1) Pulsed Test: Pulse Width = 300 s, Duty Cycle SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Fall Time
Storage Time
Rise Time
Delay Time
Small-Signal Current Gain (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Current-Gain Bandwidth Product (IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Base-Emitter Saturation Voltage (IC = 15 Adc, IB = 150 mA)
Base-Emitter On Voltage IC = 10 A, VCE = 5.0 Vdc)
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 15 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 100 mA) (IC = 15 Adc, IB = 150 mA)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 75, IB = 0) (VCE = 125, IB = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TJ = 150_C)
Collector-Emitter Sustaining Voltage (1) (IC = 0. 1 Adc, IB = 0)
2
Characteristic Characteristic (VCC = 100 V, IC = 10 A, IB = 100 mA VBE(off) = 50 V) (See Figure 2.)
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
V1 APPROX - 8.0 V V2 APPROX +12 V tr, tf 10 ns DUTY CYCLE = 1.0% 0
For NPN test circuit reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
v 2%.
25 s
MJ11017, MJ11018 MJ11021, MJ11022
MJ11017, MJ11018 MJ11021, MJ11022
MJ11018, MJ11022 MJ11017, MJ11021
51
for td and tr, D1 is disconnected and V2 = 0
RB
D1
+ 4.0 V
10 K
Motorola Bipolar Power Transistor Device Data
VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Symbol
TUT
ICEO
IEBO
ICEV
8.0
[hfe]
Cob
hFE
hfe
td tr
ts tf
VCC 100 V
RC
SCOPE
NPN
10.0 Min 150 400 100 150 250 4.4 1.2 3.0 75 -- -- -- -- -- -- -- -- -- -- --
Typical
15,000 --
PNP
Max
400 600
2.5 2.7 0.5 3.8 2.8 2.0 3.4 2.0 0.5 5.0 1.0 1.0 75 -- -- -- --
mAdc
mAdc
mAdc
Unit
Unit
Mhz
Vdc
Vdc
Vdc
Vdc
pF
s s s ns -- --
MJ11017 MJ11021 MJ11018 MJ11022
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 SINGLE PULSE 0.05 0.02 0.01 RJC(t) = r(t) RJC RJC(t) = 0.86C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk) D = 0.5 0.2
t1
t2
DUTY CYCLE, D = t1/t2 50 100 200 300 500 1000
0.02
0.03 0.05
1.0
0.2
0.3 0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
Figure 3. Thermal Response
FORWARD BIAS
IC, COLLECTOR CURRENT (AMPS) 5.0 ms 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0 3.0 dc TJ = 175C SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMAL LIMITATION @ TC = 25C SINGLE PULSE MJ11017, 18 MJ11021, 22 5.0 7.0 10 20 30 50 70 100 150 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 ms 0.5 ms 0.1 ms
There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = 175_C, TC is variable dependIng on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 175_C. T J(pk) may be calculated from the data in Figure 3. At high case temperatures thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
Figure 4. Maximum Rated Forward Bias Safe Operating Area (FBSOA)
30 IC, COLLECTOR CURRENT (AMPS) L = 200 H IC/IB1 50 TC = 25C VBE(off) 0 - 5.0 V RBE = 47 DUTY CYLE = 10%
REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be hold to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse biased turn-off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 5 gives ROSOA characteristics.
260
20
10 MJ11017, 18 MJ11021, 22 0 0 20 60 100 140 180 220 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum RBSOA, Reverse Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJ11017 MJ11021 MJ11018 MJ11022
PNP
10,000 7000 5000 hFE, DC CURRENT GAIN 3000 2000 TJ = 25C 1000 700 500 300 200 100 0.2 VCE = 5.0 Vdc TJ = 150C hFE, DC CURRENT GAIN 30,000 20,000 10,000 7000 5000 3000 2000 1000 700 500 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (A) 10 15 20 300 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (A) 10 15 20 TJ = 25C TJ = 150C
NPN
VCE = 5.0 Vdc
TJ = - 55C
TJ = - 55C
Figure 6. DC Current Gain PNP
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) IC = 15 A 3.5 3.0 IC = 5.0 A 2.5 2.0 1.5 1.0 0.5 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IB, BASE CURRENT (mA) IC = 10 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 4.0 TJ = 25C 4.0 IC = 15 A 3.5 3.0 IC = 5.0 A 2.5 2.0 1.5 1.0 0.5 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IB, BASE CURRENT (mA) IC = 10 A TJ = 25C
NPN
Figure 7. Collector Saturation Region
PNP
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 V VCE(sat) @ IC/IB = 100 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 TJ = 25C VOLTAGE (VOLTS) 4.0 3.5 TJ = 25C VOLTAGE (VOLTS) 3.0 2.5 2.0 1.5 1.0 0.5 0.1 VBE(sat) @ IC/IB = 100 VBE @ VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0
NPN
VCE(sat) @ IC/IB = 100 2.0 3.0 5.0 7.0 10 20 30 50
COLLECTOR CURRENT (AMPS)
COLLECTOR CURRENT (AMPS)
Figure 8. "On" Voltages
4
Motorola Bipolar Power Transistor Device Data
MJ11017 MJ11021 MJ11018 MJ11022
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
MJ11017 MJ11021 MJ11018 MJ11022
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
Motorola Bipolar Power Transistor Device Data
*MJ11017/D*
MJ11017/D

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